Nano-Spin Devices

• ■ PHMR Sensor

  The magnetoresistance effect is a phenomenon in which the resistance of a device is changed by an external magnetic field. Our research team is focusing on sensor fabrication and various application using Planar Hall Magnetoresistance effect (PHMR) – sensor structures, sensing materials, pattern design. Through our research, we will develop emerging materials and design of high sensitivity and high detectivity magnetic sensor.

  

  Commonly, the performance of a sensor is decided by sensitivity and detectivity. Sensitivity is strength of the sensor output voltage with respect to a magnetic field, and detectivity is the degree to which magnetic field can be distinguished from noise. To improve the sensitivity, studies about sensor structure such as bilayer, spin-valve and trilayer were conducted using a ferromagnetic layer (NiFe) and antiferromagnetic layer (IrMn). Also, research on noise reduction technology is in progress to improve the detectivity.

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  These PHMR sensors can be deposited on flexible substrates and integrated into wearable and haptic devices, or used as high-resolution biosensors. The combination of a PHMR sensor and a flexible substrate makes it ideal for continuous monitoring applications. Overall, the combination of PHMR sensors with flexible substrates opens up new possibilities for non-invasive real-time health monitoring and biosensing applications.